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Сравнить
DDR2 Список RAM
Все модули памяти, отсортированные по возрастанию задержки, Latency, ns
№
Пропусная способность
Задержка, нс
Скорость чтения, Гб/сек
Скорость записи, Гб/сек
№
2401
RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Latency
96
Read speed
2,725.2
Write speed
1,336.0
№
2402
RAM
Samsung M395T5160FB4-CE68 2GB
Latency
97
Read speed
2,919.4
Write speed
2,142.5
№
2403
RAM
Qimonda 72T128420HFA3SB 1GB
Latency
97
Read speed
3,323.3
Write speed
1,835.6
№
2404
RAM
Micron Technology 72HTS1G72PY-53EE1 8GB
Latency
97
Read speed
3,111.5
Write speed
2,525.5
№
2405
RAM
Micron Technology L19 04/2010 QBEX 2GB
Latency
97
Read speed
2,798.3
Write speed
2,382.1
№
2406
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525B
Latency
97
Read speed
2,619.5
Write speed
1,544.3
№
2407
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525F72BP4D2-Y5 2GB
Latency
97
Read speed
2,687.5
Write speed
1,627.0
№
2408
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525F72BP4N3-Y5 2GB
Latency
97
Read speed
3,108.2
Write speed
1,896.5
№
2409
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525P72CP4-Y5 2GB
Latency
97
Read speed
2,696.6
Write speed
1,939.7
№
2410
RAM
Smart Modular SG5SE42N2G1BDDEHCH 4GB
Latency
97
Read speed
3,225.8
Write speed
2,365.8
№
2411
RAM
Samsung M3 93T5160QZA-CE7 4GB
Latency
98
Read speed
3,415.0
Write speed
3,634.5
№
2412
RAM
Netlist NL8126426407F-D42L 1GB
Latency
98
Read speed
1,899.1
Write speed
1,192.2
№
2413
RAM
Samsung M395T5663QZ4-CE65 1GB
Latency
98
Read speed
3,077.7
Write speed
1,984.9
№
2414
RAM
Micron Technology 36HTF51272F667E1D4 4GB
Latency
98
Read speed
2,838.2
Write speed
1,835.4
№
2415
RAM
SK Hynix HMP31GF7AFR4C-Y5D5 8GB
Latency
98
Read speed
2,614.2
Write speed
1,843.3
№
2416
RAM
Kreton Corporation 516245122681353237 2GB
Latency
98
Read speed
3,112.5
Write speed
827.9
№
2417
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525F72CP4N3-Y5 2GB
Latency
98
Read speed
3,033.7
Write speed
2,054.7
№
2418
RAM
Elpida EBE21FD4AGFD-6E-E 2GB
Latency
98
Read speed
2,618.4
Write speed
1,815.8
№
2419
RAM
Kingston 9905316-128.A02LF 1GB
Latency
99
Read speed
1,929.1
Write speed
1,071.2
№
2420
RAM
Samsung M395T1K66AZ4-CE66 8GB
Latency
99
Read speed
2,813.0
Write speed
2,191.6
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Последние сравнения
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology BLS8G4D26BFSB.16FE 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M474A4G43MB1-CTD 32GB
takeMS International AG TMS2GB264D083805EV 2GB
Kingston ASU21D4U5S8MB-8 8GB
Samsung M378B5273DH0-CH9 4GB
Corsair CMWB8G1L2666A16W4 8GB
A-DATA Technology DDR3 1600 4GB
Samsung M471A2K43EB1-CWE 16GB
Avant Technology F641GU67F9333G 8GB
Samsung M474A4G43MB1-CTD 32GB
Kingston KHX1866C10D3/8GX 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SpecTek Incorporated ?????????????????? 2GB
Kingston X5H5PW-MIE 8GB
Samsung 1600 CL10 Series 8GB
Kingston HP32D4S2S1ME-4 4GB
Samsung M393B2G70BH0-CK0 16GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston HP37D4U1S8ME-16XR 16GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Samsung M378A5143TB2-CTD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4000C17-8GTZR 8GB
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