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比较
DDR2 RAM列表
所有内存模块，按延迟增加排序
№
带宽
延迟, ns
读取速度，GB/s
写入速度，GB/s
№
2401
RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Latency
96
Read speed
2,725.2
Write speed
1,336.0
№
2402
RAM
Samsung M395T5160FB4-CE68 2GB
Latency
97
Read speed
2,919.4
Write speed
2,142.5
№
2403
RAM
Qimonda 72T128420HFA3SB 1GB
Latency
97
Read speed
3,323.3
Write speed
1,835.6
№
2404
RAM
Micron Technology 72HTS1G72PY-53EE1 8GB
Latency
97
Read speed
3,111.5
Write speed
2,525.5
№
2405
RAM
Micron Technology L19 04/2010 QBEX 2GB
Latency
97
Read speed
2,798.3
Write speed
2,382.1
№
2406
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525B
Latency
97
Read speed
2,619.5
Write speed
1,544.3
№
2407
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525F72BP4D2-Y5 2GB
Latency
97
Read speed
2,687.5
Write speed
1,627.0
№
2408
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525F72BP4N3-Y5 2GB
Latency
97
Read speed
3,108.2
Write speed
1,896.5
№
2409
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525P72CP4-Y5 2GB
Latency
97
Read speed
2,696.6
Write speed
1,939.7
№
2410
RAM
Smart Modular SG5SE42N2G1BDDEHCH 4GB
Latency
97
Read speed
3,225.8
Write speed
2,365.8
№
2411
RAM
Samsung M3 93T5160QZA-CE7 4GB
Latency
98
Read speed
3,415.0
Write speed
3,634.5
№
2412
RAM
Netlist NL8126426407F-D42L 1GB
Latency
98
Read speed
1,899.1
Write speed
1,192.2
№
2413
RAM
Samsung M395T5663QZ4-CE65 1GB
Latency
98
Read speed
3,077.7
Write speed
1,984.9
№
2414
RAM
Micron Technology 36HTF51272F667E1D4 4GB
Latency
98
Read speed
2,838.2
Write speed
1,835.4
№
2415
RAM
SK Hynix HMP31GF7AFR4C-Y5D5 8GB
Latency
98
Read speed
2,614.2
Write speed
1,843.3
№
2416
RAM
Kreton Corporation 516245122681353237 2GB
Latency
98
Read speed
3,112.5
Write speed
827.9
№
2417
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP525F72CP4N3-Y5 2GB
Latency
98
Read speed
3,033.7
Write speed
2,054.7
№
2418
RAM
Elpida EBE21FD4AGFD-6E-E 2GB
Latency
98
Read speed
2,618.4
Write speed
1,815.8
№
2419
RAM
Kingston 9905316-128.A02LF 1GB
Latency
99
Read speed
1,929.1
Write speed
1,071.2
№
2420
RAM
Samsung M395T1K66AZ4-CE66 8GB
Latency
99
Read speed
2,813.0
Write speed
2,191.6
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最新比较
Samsung M393B1K70CH0-CH9 8GB
Kingston KHX4000C19D4/8GX 8GB
Samsung M471B5173QH0-YK0 4GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Kingston 99U5471-012.A00LF 4GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3000C14-8GVR 8GB
Peak Electronics 256X64M-67E 2GB
Essencore Limited KD4AGS88C-26N1900 16GB
A-DATA Technology DDR3 1600 4GB
Samsung M471A2K43EB1-CWE 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
A-DATA Technology DQVE1908 512MB
SK Hynix GKE800UD102408-2133 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3600C18-8GVK 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
AMD R7416G2133U2S 16GB
Samsung M393B1K70QB0-CK0 8GB
SK Hynix HMA42GR7AFR4N-TF 16GB
Smart Modular SF564128CJ8N6NNSEG 4GB
A-DATA Technology AO1P32NCSV1-BDBS 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
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