RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
A-DATA Technology DDR4 2400 16GB
Kingston HP26D4S9S8MH-8 8GB

A-DATA Technology DDR4 2400 16GB vs Kingston HP26D4S9S8MH-8 8GB

总分
star star star star star
A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

总分
star star star star star
Kingston HP26D4S9S8MH-8 8GB

Kingston HP26D4S9S8MH-8 8GB

差异 规格 评论

差异

A-DATA Technology DDR4 2400 16GB 需要考虑的原因
A-DATA Technology DDR4 2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 35
    左右 14% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 14.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.5 left arrow 10.7
    测试中的平均数值
Kingston HP26D4S9S8MH-8 8GB 需要考虑的原因
Kingston HP26D4S9S8MH-8 8GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR4 2400 16GB
Kingston HP26D4S9S8MH-8 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 35
  • 读取速度，GB/s
    16.8 left arrow 14.6
  • 写入速度，GB/s
    11.5 left arrow 10.7
  • 内存带宽，mbps
    17000 left arrow 21300
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3019 left arrow 2560

A-DATA Technology DDR4 2400 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB

Kingston HP26D4S9S8MH-8 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
G Skill Intl F4-4000C18-32GTRS 32GB
G Skill Intl F4-4000C18-32GTRS 32GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Samsung M471A2K43DB1-CTD 16GB
Samsung M471A2K43DB1-CTD 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
AMD R7416G2400U2S 16GB
AMD R7416G2400U2S 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CMK32GX4M4K4000C19 8GB
Corsair CMK32GX4M4K4000C19 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3200C15-8GTZKY 8GB
G Skill Intl F4-3200C15-8GTZKY 8GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Kingston 8ATF1G64AZ-2G1B1 8GB
Kingston 8ATF1G64AZ-2G1B1 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-2400C14-16GRK 16GB
G Skill Intl F4-2400C14-16GRK 16GB
内存RAM
G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Kingston XF875V-HYA 8GB
Kingston XF875V-HYA 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
Crucial Technology BLS8G4D30AESBK.M8FE 8GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
Team Group Inc. TEAMGROUP-D4-3866 4GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Corsair CMW64GX4M2E3200C16 32GB
Corsair CMW64GX4M2E3200C16 32GB
内存RAM
Apacer Technology 78.B1GET.AU00C 4GB
Apacer Technology 78.B1GET.AU00C 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
内存RAM