AMD R5316G1609U2K 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

更快的写入速度，GB/s

5.2 5.0

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

报告一个错误

低于PassMark测试中的延时，ns

37 73

左右 -97% 更低的延时
更快的读取速度，GB/s

8.8 6.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 37
读取速度，GB/s

6.3 8.8
写入速度，GB/s

5.2 5.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1309 1967

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M391A2K43BB1-CPB 16GB

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Crucial Technology BL16G32C16U4B.16FE 16GB

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Essencore Limited IM4AGU88N26-GIIHMB 16GB

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A-DATA Technology DQVE1908 512MB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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G Skill Intl F4-3600C16-8GTZN 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

G Skill Intl F4-3600C14-8GTRSB 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Corsair CMK64GX4M4A2400C14 16GB

Corsair CMK64GX4M4A2400C14 16GB