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Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
A-DATA Technology DDR4 2400 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB vs A-DATA Technology DDR4 2400 16GB

总分
star star star star star
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

总分
star star star star star
A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

差异 规格 评论

差异

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB 需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 30
    左右 7% 更低的延时
  • 更快的读取速度，GB/s
    18.1 left arrow 16.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 11.5
    测试中的平均数值
A-DATA Technology DDR4 2400 16GB 需要考虑的原因
A-DATA Technology DDR4 2400 16GB
报告一个错误

规格

完整的技术规格清单
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
A-DATA Technology DDR4 2400 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 30
  • 读取速度，GB/s
    18.1 left arrow 16.8
  • 写入速度，GB/s
    14.8 left arrow 11.5
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3564 left arrow 3019

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB RAM的比较

G Skill Intl F3-10600CL9-2GBNT 2GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB

A-DATA Technology DDR4 2400 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
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