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Corsair CMY8GX3M2A2666C10 4GB
V-Color Technology Inc. TN48G26S819-SB 8GB

Corsair CMY8GX3M2A2666C10 4GB vs V-Color Technology Inc. TN48G26S819-SB 8GB

总分
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

总分
star star star star star
V-Color Technology Inc. TN48G26S819-SB 8GB

V-Color Technology Inc. TN48G26S819-SB 8GB

差异 规格 评论

差异

Corsair CMY8GX3M2A2666C10 4GB 需要考虑的原因
Corsair CMY8GX3M2A2666C10 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 25
    左右 32% 更低的延时
  • 更快的读取速度，GB/s
    22.8 left arrow 16.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 13.6
    测试中的平均数值
V-Color Technology Inc. TN48G26S819-SB 8GB 需要考虑的原因
V-Color Technology Inc. TN48G26S819-SB 8GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CMY8GX3M2A2666C10 4GB
V-Color Technology Inc. TN48G26S819-SB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    17 left arrow 25
  • 读取速度，GB/s
    22.8 left arrow 16.8
  • 写入速度，GB/s
    15.4 left arrow 13.6
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3391 left arrow 2889

Corsair CMY8GX3M2A2666C10 4GB RAM的比较

Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB

V-Color Technology Inc. TN48G26S819-SB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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