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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4DFD824A.M16FD 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Crucial Technology CT16G4DFD824A.M16FD 16GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
Crucial Technology CT16G4DFD824A.M16FD 16GB

Crucial Technology CT16G4DFD824A.M16FD 16GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 更快的写入速度，GB/s
    12.0 left arrow 11.3
    测试中的平均数值
Crucial Technology CT16G4DFD824A.M16FD 16GB 需要考虑的原因
Crucial Technology CT16G4DFD824A.M16FD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 29
    左右 -16% 更低的延时
  • 更快的读取速度，GB/s
    17 left arrow 16.9
    测试中的平均数值

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4DFD824A.M16FD 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 25
  • 读取速度，GB/s
    16.9 left arrow 17.0
  • 写入速度，GB/s
    12.0 left arrow 11.3
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 2912

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

Crucial Technology CT16G4DFD824A.M16FD 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Crucial Technology CT16G4DFD824A.M16FD 16GB
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内存RAM
Corsair CM2X2048-6400C4DHX 2GB
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Kingston 99U5469-045.A00LF 4GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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内存RAM
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内存RAM
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A-DATA Technology DQKD1A08 1GB
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内存RAM
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Nanya Technology M2Y1G64TU8HB0B-25C 1GB
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G Skill Intl F4-3600C16-8GTRGC 8GB
内存RAM
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A-DATA Technology VDQVE1B16 2GB
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内存RAM
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