Crucial Technology BLS4G4D240FSE.8FBD 4GB vs G Skill Intl F4-2933C14-8GTZRX 8GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

G Skill Intl F4-2933C14-8GTZRX 8GB

G Skill Intl F4-2933C14-8GTZRX 8GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 54

左右 46% 更低的延时
更快的写入速度，GB/s

12.0 9.3

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-2933C14-8GTZRX 8GB

需要考虑的原因
G Skill Intl F4-2933C14-8GTZRX 8GB

报告一个错误

更快的读取速度，GB/s

17.5 16.9

测试中的平均数值

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-2933C14-8GTZRX 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 54
读取速度，GB/s

16.9 17.5
写入速度，GB/s

12.0 9.3
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2601 2264

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4DFS824A.M8FH 8GB

Crucial Technology CT8G4DFS824A.M8FH 8GB

Samsung M471B5173DB0-YK0 4GB

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G Skill Intl F4-2133C15-8GVK 8GB

G Skill Intl F4-2133C15-8GVK 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Crucial Technology BL16G32C16U4WL.M16FE 16GB

Crucial Technology BL16G32C16U4WL.M16FE 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

G Skill Intl F4-4000C18-8GTZKK 8GB

G Skill Intl F4-4000C18-8GTZKK 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston 9965600-023.A00G 16GB

Kingston 9965600-023.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingmax Semiconductor GLAG42F-18---------- 8GB

Kingmax Semiconductor GLAG42F-18---------- 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

A-DATA Technology DDR4 2800 8GB

A-DATA Technology DDR4 2800 8GB

Samsung M3 78T6553CZ3-CD5 512MB

Samsung M3 78T6553CZ3-CD5 512MB

G Skill Intl F4-3600C19-16GSXF 16GB

G Skill Intl F4-3600C19-16GSXF 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology BLS4G4D26BFSC.8FB 4GB

Crucial Technology BLS4G4D26BFSC.8FB 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Corsair CMD32GX4M4B3200C16 8GB

Corsair CMD32GX4M4B3200C16 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3000C14-8GVK 8GB

G Skill Intl F4-3000C14-8GVK 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

G Skill Intl F4-3200C16-4GVKB 4GB

G Skill Intl F4-3200C16-4GVKB 4GB