Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Gloway International (HK) STK4U2400D17041C 4GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

Gloway International (HK) STK4U2400D17041C 4GB

Gloway International (HK) STK4U2400D17041C 4GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 71

左右 59% 更低的延时
更快的读取速度，GB/s

16.9 15.8

测试中的平均数值
更快的写入速度，GB/s

12.0 7.9

测试中的平均数值

Gloway International (HK) STK4U2400D17041C 4GB

需要考虑的原因
Gloway International (HK) STK4U2400D17041C 4GB

报告一个错误

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Gloway International (HK) STK4U2400D17041C 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 71
读取速度，GB/s

16.9 15.8
写入速度，GB/s

12.0 7.9
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2601 1757

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Kingston 9905599-010.A00G 4GB

Kingston 9905599-010.A00G 4GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

G Skill Intl F4-3600C17-16GTZR 16GB

G Skill Intl F4-3600C17-16GTZR 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

Essencore Limited IM44GU48N26-GIIHA0 4GB

Crucial Technology BLS4G3D1609DS1S00. 4GB

Crucial Technology BLS4G3D1609DS1S00. 4GB

Corsair CMZ8GX3M2A1600C9 4GB

Corsair CMZ8GX3M2A1600C9 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

G Skill Intl F4-3200C14-16GTRS 16GB

G Skill Intl F4-3200C14-16GTRS 16GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Corsair CMR32GX4M4D3000C16 8GB

Corsair CMR32GX4M4D3000C16 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173EB0-YK0 4GB

Samsung M471B5173BH0-CH9 4GB

Samsung M471B5173BH0-CH9 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Kingston KHX3466C17D4/16GX 16GB

Kingston KHX3466C17D4/16GX 16GB

Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

Team Group Inc. TEAMGROUP-UD4-3000 8GB

Team Group Inc. TEAMGROUP-UD4-3000 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

G Skill Intl F4-3400C16-16GTZ 16GB

G Skill Intl F4-3400C16-16GTZ 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB

Kllisre KRE-D3U1600M/8G 8GB

Kllisre KRE-D3U1600M/8G 8GB

Wilk Elektronik S.A. IRH3200D464L16/16G 16GB

Wilk Elektronik S.A. IRH3200D464L16/16G 16GB