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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378A2G43MB1-CTD 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Samsung M378A2G43MB1-CTD 16GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
Samsung M378A2G43MB1-CTD 16GB

Samsung M378A2G43MB1-CTD 16GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 43
    左右 33% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 11.2
    测试中的平均数值
Samsung M378A2G43MB1-CTD 16GB 需要考虑的原因
Samsung M378A2G43MB1-CTD 16GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378A2G43MB1-CTD 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 43
  • 读取速度，GB/s
    16.9 left arrow 11.6
  • 写入速度，GB/s
    12.0 left arrow 11.2
  • 内存带宽，mbps
    19200 left arrow 25600
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 2615

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

Samsung M378A2G43MB1-CTD 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
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内存RAM
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内存RAM
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内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Micron Technology 8ATF1G64HZ-2G6J1 8GB
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