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Crucial Technology BLS8G3N18AES4.16FE 8GB
G Skill Intl F4-3600C19-16GTRG 16GB
比较
Crucial Technology BLS8G3N18AES4.16FE 8GB vs G Skill Intl F4-3600C19-16GTRG 16GB
总分
Crucial Technology BLS8G3N18AES4.16FE 8GB
总分
G Skill Intl F4-3600C19-16GTRG 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3600C19-16GTRG 16GB
报告一个错误
低于PassMark测试中的延时,ns
25
42
左右 -68% 更低的延时
更快的读取速度,GB/s
19.4
13.2
测试中的平均数值
更快的写入速度,GB/s
16.3
9.4
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS8G3N18AES4.16FE 8GB
G Skill Intl F4-3600C19-16GTRG 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
25
读取速度,GB/s
13.2
19.4
写入速度,GB/s
9.4
16.3
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2326
3933
Crucial Technology BLS8G3N18AES4.16FE 8GB RAM的比较
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
G Skill Intl F4-3600C19-16GTRG 16GB RAM的比较
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston K6VDX7-HYD 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Roa Logic BV W4U2666CX1-8G 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
G Skill Intl F4-3600C19-16GTRG 16GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-3200C14-32GTRS 32GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9965640-001.C00G 16GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CM4B8G4J2400A16K2-ON 8GB
A-DATA Technology AD73I1B1672EG 2GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3200C16-16GSXKB 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C14-16GTZ 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
SK Hynix GKE800UD102408-2400 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-4000C19-16GTZR 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-4000C19-4GVK 4GB
Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
报告一个错误
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