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Crucial Technology CT51264AA667.M16FC 4GB
Apacer Technology 76.B305G.D500B 4GB

Crucial Technology CT51264AA667.M16FC 4GB vs Apacer Technology 76.B305G.D500B 4GB

总分
star star star star star
Crucial Technology CT51264AA667.M16FC 4GB

Crucial Technology CT51264AA667.M16FC 4GB

总分
star star star star star
Apacer Technology 76.B305G.D500B 4GB

Apacer Technology 76.B305G.D500B 4GB

差异 规格 评论

差异

Crucial Technology CT51264AA667.M16FC 4GB 需要考虑的原因
Crucial Technology CT51264AA667.M16FC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    58 left arrow 101
    左右 43% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 13.9
    测试中的平均数值
Apacer Technology 76.B305G.D500B 4GB 需要考虑的原因
Apacer Technology 76.B305G.D500B 4GB
报告一个错误
  • 更快的写入速度，GB/s
    6.7 left arrow 1,949.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264AA667.M16FC 4GB
Apacer Technology 76.B305G.D500B 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    58 left arrow 101
  • 读取速度，GB/s
    4,463.9 left arrow 13.9
  • 写入速度，GB/s
    1,949.3 left arrow 6.7
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    803 left arrow 1311

Crucial Technology CT51264AA667.M16FC 4GB RAM的比较

Apacer Technology 78.D1GMM.AU10B 16GB

Apacer Technology 76.B305G.D500B 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT51264AA667.M16FC 4GB
Crucial Technology CT51264AA667.M16FC 4GB
Apacer Technology 76.B305G.D500B 4GB
Apacer Technology 76.B305G.D500B 4GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Crucial Technology BL8G24C16U4B.8FB 8GB
Crucial Technology BL8G24C16U4B.8FB 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4266C17-16GVKB 16GB
G Skill Intl F4-4266C17-16GVKB 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
SK Hynix GKE160SO102408-3000 16GB
SK Hynix GKE160SO102408-3000 16GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
V-GEN D4S8GL30A8TS5 8GB
V-GEN D4S8GL30A8TS5 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Team Group Inc. DDR4 3000 4GB
Team Group Inc. DDR4 3000 4GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-2800C15-4GVR 4GB
G Skill Intl F4-2800C15-4GVR 4GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3200C14-8GVR 8GB
G Skill Intl F4-3200C14-8GVR 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston 9905678-058.A00G 4GB
Kingston 9905678-058.A00G 4GB
内存RAM
Nanya Technology M2Y51264TU88A2B-3C 512MB
Nanya Technology M2Y51264TU88A2B-3C 512MB
Kingston ACR26D4S9S8ME-8 8GB
Kingston ACR26D4S9S8ME-8 8GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMK16GX4M4B3400C16 4GB
Corsair CMK16GX4M4B3400C16 4GB
内存RAM