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Crucial Technology CT51264AC800.C16FC 4GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
比较
Crucial Technology CT51264AC800.C16FC 4GB vs Memphis Electronic D4SO1G724GI-A58SD 8GB
总分
Crucial Technology CT51264AC800.C16FC 4GB
总分
Memphis Electronic D4SO1G724GI-A58SD 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264AC800.C16FC 4GB
报告一个错误
更快的读取速度,GB/s
4
11.7
测试中的平均数值
需要考虑的原因
Memphis Electronic D4SO1G724GI-A58SD 8GB
报告一个错误
低于PassMark测试中的延时,ns
30
62
左右 -107% 更低的延时
更快的写入速度,GB/s
6.6
2,378.6
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264AC800.C16FC 4GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
62
30
读取速度,GB/s
4,670.6
11.7
写入速度,GB/s
2,378.6
6.6
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
861
1832
Crucial Technology CT51264AC800.C16FC 4GB RAM的比较
Kingston KVR800D2S6/4G 4GB
Corsair CMT16GX4M2C3000C15 8GB
Memphis Electronic D4SO1G724GI-A58SD 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1G70BH0-CK0 8GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Transcend Information TS512MSK64W6H 4GB
Crucial Technology BL16G32C16S4B.8FB 16GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-3600C16-32GTZR 32GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-3466C16-4GTZ 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4X4GF2400C16K4 4GB
Samsung M393B1G70BH0-YK0 8GB
Transcend Information TS512MLH64V4H 4GB
Kingston KVR16N11/8-SP 8GB
AMD R7416G2133U2S 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Ramaxel Technology RMSA3260KC78HAF-2666 8GB
Kingston KP4T2F-PSB 4GB
Samsung M471A2G43BB2-CWE 16GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-3400C16-4GRBD 4GB
Peak Electronics 256X64M-67E 2GB
Crucial Technology CT4G4DFS824A.C8FDD2 4GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-2133C15-8GNT 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3000C16-16GSXFB 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
报告一个错误
×
Bug description
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