RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F2-8500CL5-2GBPI 2GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
比较
G Skill Intl F2-8500CL5-2GBPI 2GB vs Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
总分
G Skill Intl F2-8500CL5-2GBPI 2GB
总分
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
更快的读取速度,GB/s
6
18.4
测试中的平均数值
更快的写入速度,GB/s
2,935.8
15.2
测试中的平均数值
需要考虑的原因
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
45
左右 -50% 更低的延时
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
45
30
读取速度,GB/s
6,336.8
18.4
写入速度,GB/s
2,935.8
15.2
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1144
3625
G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较
OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB RAM的比较
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
TwinMOS 8DHE3MN8-HATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
Samsung M393A1G40DB0-CPB 8GB
Patriot Memory (PDP Systems) PSD44G266681 4GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMT16GX4M2C3600C18 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-2400C17-8GSXK 8GB
SK Hynix HYMP512S64CP8-Y5 1GB
Transcend Information JM3200HLE-16G 16GB
Samsung M391B5673EH1-CH9 2GB
Panram International Corporation PUD42400C168GVS 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston LV32D4U2S8ME-16X 16GB
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Asgard VMA45UG-MEC1U2AW2 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
InnoDisk Corporation M4S0-8GSSOCRG 8GB
AMD R534G1601U1S-UO 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT16G4SFS832A.C8FB 16GB
Team Group Inc. Team-Elite-1333 4GB
Samsung M393A2K40BB2-CTD 16GB
Intel 99P5471-013.A00LF 4GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-3600C16-8GTZNC 8GB
报告一个错误
×
Bug description
Source link