G Skill Intl F3-1333C9-4GIS 4GB vs Crucial Technology BLS4G4D240FSA.8FAD 4GB

总分

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分

Crucial Technology BLS4G4D240FSA.8FAD 4GB

Crucial Technology BLS4G4D240FSA.8FAD 4GB

差异规格评论

差异

G Skill Intl F3-1333C9-4GIS 4GB

需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB

报告一个错误

Crucial Technology BLS4G4D240FSA.8FAD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSA.8FAD 4GB

报告一个错误

更快的读取速度，GB/s

12.8 12.4

测试中的平均数值
更快的写入速度，GB/s

10.2 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1333C9-4GIS 4GB

Crucial Technology BLS4G4D240FSA.8FAD 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 28
读取速度，GB/s

12.4 12.8
写入速度，GB/s

7.5 10.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2014 2545

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Crucial Technology BLS4G4D240FSA.M8FADG 4GB

Crucial Technology BLS4G4D240FSA.M8FADG 4GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology CT16G4SFD8213.C16FBR 16GB

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Hewlett-Packard 7EH98AA#ABB 8GB

Hewlett-Packard 7EH98AA#ABB 8GB