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G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
比较
G Skill Intl F4-4000C14-16GTZR 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
总分
G Skill Intl F4-4000C14-16GTZR 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F4-4000C14-16GTZR 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
122
左右 76% 更低的延时
更快的读取速度,GB/s
24
9.4
测试中的平均数值
更快的写入速度,GB/s
20.0
5.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
报告一个错误
更高的内存带宽,mbps
19200
17000
左右 1.13 更高的带宽
规格
完整的技术规格清单
G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
122
读取速度,GB/s
24.0
9.4
写入速度,GB/s
20.0
5.8
内存带宽,mbps
17000
19200
Other
描述
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
4156
1411
G Skill Intl F4-4000C14-16GTZR 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB RAM的比较
A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hexon Technology Pte Ltd HEXON 1GB
Wilk Elektronik S.A. GY2400D464L15/8G 8GB
Corsair CMSO4GX3M1C1600C11 4GB
Kingston X75V1H-MIE 32GB
Kingston 99U5403-468.A00LF 8GB
Corsair CMN32GX4M2Z3200C16 16GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
Kingston DDR3 1333G 2GB
A-DATA Technology DOVF1B163G2G 2GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
Kingston 9905403-447.A00LF 4GB
G Skill Intl F4-3600C18-32GTRS 32GB
Samsung M471B5173EB0-YK0 4GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Kingston KVR533D2N4 512MB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
Kingston ACR512X64D3S13C9G 4GB
Smart Modular SF4641G8CK8I8GKSBG 8GB
Samsung 1600 CL10 Series 8GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Samsung M4 70T5663QZ3-CF7 2GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
Samsung M393B2G70BH0-CH9 16GB
Apacer Technology 78.CAGMT.40C0B 8GB
ASint Technology SSA302G08-EGN1C 4GB
SK Hynix HMA851S6AFR6N-UH 4GB
Samsung M393B1G70BH0-CK0 8GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
报告一个错误
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Bug description
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