RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
比较
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB vs Micron Technology 9ASF51272PZ-2G3B1 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
总分
Micron Technology 9ASF51272PZ-2G3B1 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
报告一个错误
低于PassMark测试中的延时,ns
36
53
左右 32% 更低的延时
需要考虑的原因
Micron Technology 9ASF51272PZ-2G3B1 4GB
报告一个错误
更快的读取速度,GB/s
10.1
9.3
测试中的平均数值
更快的写入速度,GB/s
8.0
7.0
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
36
53
读取速度,GB/s
9.3
10.1
写入速度,GB/s
7.0
8.0
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1891
2319
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB RAM的比较
Kingston 9965516-112.A00LF 16GB
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 9ASF51272PZ-2G3B1 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT42GR7AFR4A-PB 16GB
Corsair CM4X16GC3200C16K2 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Micron Technology 9ASF51272PZ-2G3B1 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Apacer Technology 78.CAGMR.ARC0B 8GB
Kingston 9905403-437.A01LF 4GB
Transcend Information TS512MSH64V1H 4GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CB8GS2666.C8ET 8GB
Strontium EVMT8G1600U86S 8GB
Transcend Information JM2666HLB-16G 16GB
Kingston 9905316-106.A02LF 1GB
G Skill Intl F4-3000C15-16GVR 16GB
Kingston 9905403-437.A01LF 4GB
Essencore Limited KD44GU480-26N160T 4GB
AMD R5S38G1601U2S 8GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-2800C18-8GRS 8GB
Samsung M471B5173QH0-YK0 4GB
Kingston KV0M5R-MIE 8GB
Kingston 99U5584-005.A00LF 4GB
Corsair CMD16GX4M2B3466C16 8GB
PUSKILL DDR3 1600 8G 8GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
报告一个错误
×
Bug description
Source link