Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Corsair CMSX32GX4M2A2933C19 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs Corsair CMSX32GX4M2A2933C19 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

总分
star star star star star
Corsair CMSX32GX4M2A2933C19 16GB

Corsair CMSX32GX4M2A2933C19 16GB

差异

  • 低于PassMark测试中的延时,ns
    29 left arrow 30
    左右 3% 更低的延时
  • 更快的读取速度,GB/s
    17.2 left arrow 12.1
    测试中的平均数值
  • 更快的写入速度,GB/s
    15.1 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽,mbps
    23400 left arrow 12800
    左右 1.83 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Corsair CMSX32GX4M2A2933C19 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时,ns
    29 left arrow 30
  • 读取速度,GB/s
    12.1 left arrow 17.2
  • 写入速度,GB/s
    7.8 left arrow 15.1
  • 内存带宽,mbps
    12800 left arrow 23400
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-23400, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • 排名PassMark (越多越好)
    2177 left arrow 3428
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