RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT16G4DFD824A.C16FAD 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Crucial Technology CT16G4DFD824A.C16FAD 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
33
左右 27% 更低的延时
更快的写入速度,GB/s
12.5
10.7
测试中的平均数值
需要考虑的原因
Crucial Technology CT16G4DFD824A.C16FAD 16GB
报告一个错误
更快的读取速度,GB/s
16.3
16
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
33
读取速度,GB/s
16.0
16.3
写入速度,GB/s
12.5
10.7
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2925
2937
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4DFD824A.C16FAD 16GB
Crucial Technology CT51264BD160B.C16F 4GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Kingston KHX1866C10D3/4G 4GB
G Skill Intl F4-4400C19-8GTZSW 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
Samsung M393B1G70BH0-CK0 8GB
Super Talent F3200UA8G 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Kingston XN205T-MIE 16GB
Hexon Technology Pte Ltd HEXON 1GB
Ramsta Ramsta-2400Mhz-8G 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-3000C16-8GTRS 8GB
Crucial Technology CT102464BD160B.M16 8GB
G Skill Intl F4-3200C16-8GTZN 8GB
Kingston KVR16N11/8-SP 8GB
Kingston HX424C15PB/4 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-4GVK 4GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3200C16-16GTZ 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Smart Modular SMS4TDC3C0K0446SCG 4GB
报告一个错误
×
Bug description
Source link