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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M3 93T2950EZ3-CCC 1GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M3 93T2950EZ3-CCC 1GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Samsung M3 93T2950EZ3-CCC 1GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
60
左右 60% 更低的延时
更快的写入速度,GB/s
12.5
1,234.6
测试中的平均数值
更高的内存带宽,mbps
19200
3200
左右 6% 更高的带宽
需要考虑的原因
Samsung M3 93T2950EZ3-CCC 1GB
报告一个错误
更快的读取速度,GB/s
3
16
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M3 93T2950EZ3-CCC 1GB
主要特点
存储器类型
DDR4
DDR2
PassMark中的延时,ns
24
60
读取速度,GB/s
16.0
3,069.5
写入速度,GB/s
12.5
1,234.6
内存带宽,mbps
19200
3200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
3-3-3-12 / 400 MHz
排名PassMark (越多越好)
2925
459
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB RAM的比较
G Skill Intl F4-4400C19-32GTRS 32GB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
takeMS International AG TMS2GB264D082-805G 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M471A1K1KBB0-CPB 8GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology BLS8G4D240FSB.16FADG 8GB
Corsair CMV4GX3M1B1600C11 4GB
G Skill Intl F4-3200C16-8GRKB 8GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-4400C19-16GTZR 16GB
Kingston ACR16D3LFS1KBG/2G 2GB
G Skill Intl F4-3200C15-16GTZSW 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Heoriady M471A1K43CB1-CTD 8GB
SK Hynix HMA81GS6DJR8N-XN 8GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Apacer Technology 78.CAGP7.C7Z0B 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT16G4DFD824A.M16FA 16GB
Samsung 1600 CL10 Series 8GB
AMD R7416G2400U2S 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Apacer Technology 78.C1GQB.4032B 8GB
Samsung M386B4G70DM0-CMA4 32GB
A-DATA Technology DDR4 3600 8GB
Kingston KVR16N11/8-SP 8GB
Kingston HP24D4U7S8MBP-8 8GB
报告一个错误
×
Bug description
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