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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2933C16-16GTZRX 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2933C16-16GTZRX 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-2933C16-16GTZRX 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-2933C16-16GTZRX 16GB
报告一个错误
低于PassMark测试中的延时,ns
22
24
左右 -9% 更低的延时
更快的读取速度,GB/s
16.7
16
测试中的平均数值
更快的写入速度,GB/s
13.4
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2933C16-16GTZRX 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
22
读取速度,GB/s
16.0
16.7
写入速度,GB/s
12.5
13.4
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
3188
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-2933C16-16GTZRX 16GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3600C16-8GTZKK 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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G Skill Intl F4-3000C14-8GVR 8GB
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InnoDisk Corporation M4C0-AGS1TCIK 16GB
A-DATA Technology DOVF1B163G2G 2GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
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Samsung M393A2K40BB0-CPB 16GB
G Skill Intl F5-6400J3239G16G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-4000C17-8GTRS 8GB
报告一个错误
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