RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 8ATF51264AZ-2G1B1 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Micron Technology 8ATF51264AZ-2G1B1 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
29
左右 17% 更低的延时
更快的读取速度,GB/s
16
15.8
测试中的平均数值
更快的写入速度,GB/s
12.5
11.8
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Micron Technology 8ATF51264AZ-2G1B1 4GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
29
读取速度,GB/s
16.0
15.8
写入速度,GB/s
12.5
11.8
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
2711
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Micron Technology 8ATF51264AZ-2G1B1 4GB RAM的比较
Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 8ATF51264AZ-2G1B1 4GB
G Skill Intl F3-1866C8-8GTX 8GB
A-DATA Technology AM1P24HC8T1-BBJS 8GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMK16GX4M2E4333C19 8GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 9905625-096.A00G 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Avant Technology J644GU44J2320NQ 32GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Wilk Elektronik S.A. GR2133S464L15/8G 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMV16GX4M1L2400C16 16GB
Kingston 99U5458-008.A00LF 4GB
Kingston 9905712-001.B00G 16GB
takeMS International AG TMS2GB264D082-805G 2GB
Apacer Technology GD2.1831WS.002 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMK32GX4M4C3333C16 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3200C14-8GVK 8GB
Corsair CMX4GX3M2A1600C9 2GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
AMD AE34G1601U1 4GB
Crucial Technology BLS4G4D240FSB.8FADG 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4SFS8213.C8FH1 8GB
报告一个错误
×
Bug description
Source link