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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung 9905599-020.A00G 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung 9905599-020.A00G 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Samsung 9905599-020.A00G 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
26
左右 8% 更低的延时
更快的读取速度,GB/s
16
15.6
测试中的平均数值
需要考虑的原因
Samsung 9905599-020.A00G 16GB
报告一个错误
更快的写入速度,GB/s
13.2
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung 9905599-020.A00G 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
26
读取速度,GB/s
16.0
15.6
写入速度,GB/s
12.5
13.2
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2925
2783
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Samsung 9905599-020.A00G 16GB RAM的比较
Kingston 9965525-155.A00LF 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F5-6400J3239G16G 16GB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
Crucial Technology CT102464BF160B.C16 8GB
Corsair CMV8GX4M1A2400C16 8GB
Kingston 9905402-665.A00LF 4GB
G Skill Intl F4-4800C18-8GTRS 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMD16GX4M2B3600C18 8GB
takeMS International AG TMS2GB264D083805EV 2GB
Smart Modular SF4721G8CKHH6DFSDS 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston KHX2666C15D4/4G 4GB
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Corsair CMY8GX3M2A2666C10 4GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3600C18-32GTZN 32GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-3600C17-4GTZ 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston 9965589-007.D01G 8GB
Samsung M393B5170FH0-CK0 4GB
Gloway International Co. Ltd. TYA4U2666D19321C 32GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
报告一个错误
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Bug description
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