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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Super Talent F24UB16GV 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Super Talent F24UB16GV 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Super Talent F24UB16GV 16GB

Super Talent F24UB16GV 16GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
Super Talent F24UB16GV 16GB 需要考虑的原因
Super Talent F24UB16GV 16GB
报告一个错误
  • 更快的写入速度，GB/s
    13.0 left arrow 12.5
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Super Talent F24UB16GV 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 24
  • 读取速度，GB/s
    16.0 left arrow 16.0
  • 写入速度，GB/s
    12.5 left arrow 13.0
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 13 14 15 16 17
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 3046

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Super Talent F24UB16GV 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3600C16-8GTESC 8GB
G Skill Intl F4-3600C16-8GTESC 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston MSI24D4D4S8MB-8 8GB
Kingston MSI24D4D4S8MB-8 8GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8G
内存RAM
Samsung M471B1G73EB0-YK0 8GB
Samsung M471B1G73EB0-YK0 8GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Super Talent F24UB16GV 16GB
Super Talent F24UB16GV 16GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
G Skill Intl F4-3000C16-8GVSB 8GB
G Skill Intl F4-3000C16-8GVSB 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Corsair CMK32GX4M4B3333C16 8GB
Corsair CMK32GX4M4B3333C16 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-3600C14-8GTRSB 8GB
G Skill Intl F4-3600C14-8GTRSB 8GB
内存RAM
G Skill Intl F3-14900CL10-8GBXL 8GB
G Skill Intl F3-14900CL10-8GBXL 8GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Transcend Information TS512MLH64V4H 4GB
Transcend Information TS512MLH64V4H 4GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
G Skill Intl F4-2133C15-4GRS 4GB
G Skill Intl F4-2133C15-4GRS 4GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Kingston 99U5711-001.A00G 4GB
Kingston 99U5711-001.A00G 4GB
内存RAM