Kingmax Semiconductor FLFE85F-C8KL9 2GB vs Corsair CMD16GX4M4B3300C16 4GB

总分

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

总分

Corsair CMD16GX4M4B3300C16 4GB

Corsair CMD16GX4M4B3300C16 4GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KL9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KL9 2GB

报告一个错误

Corsair CMD16GX4M4B3300C16 4GB

需要考虑的原因
Corsair CMD16GX4M4B3300C16 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 -17% 更低的延时
更快的读取速度，GB/s

16.5 10.1

测试中的平均数值
更快的写入速度，GB/s

13.1 6.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Corsair CMD16GX4M4B3300C16 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 23
读取速度，GB/s

10.1 16.5
写入速度，GB/s

6.2 13.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1411 3130

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Crucial Technology BLE4G4D30AEEA.K8FE 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666

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Samsung M393B2G70BH0-CK0 16GB

Kingston X74R9W-MIE 8GB

Kingston X74R9W-MIE 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B5273DH0-YH0 8GB

Samsung M471B5273DH0-YH0 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

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Samsung M471A4G43MB1-CTD 32GB

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Kingston 9905471-002.A00LF 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G