Kingston ACR16D3LS1NGG/2G 2GB vs Transcend Information TS1GSH64V1H 8GB

总分

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

总分

Transcend Information TS1GSH64V1H 8GB

Transcend Information TS1GSH64V1H 8GB

差异规格评论

差异

Kingston ACR16D3LS1NGG/2G 2GB

需要考虑的原因
Kingston ACR16D3LS1NGG/2G 2GB

报告一个错误

Transcend Information TS1GSH64V1H 8GB

需要考虑的原因
Transcend Information TS1GSH64V1H 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 84

左右 -211% 更低的延时
更快的读取速度，GB/s

14.2 5

测试中的平均数值
更快的写入速度，GB/s

9.8 3.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1NGG/2G 2GB

Transcend Information TS1GSH64V1H 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

84 27
读取速度，GB/s

5.0 14.2
写入速度，GB/s

3.6 9.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

878 2330

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology AO1P32NCSV1-BEWS 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology CT16G4SFD824A.M16FE 16GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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G Skill Intl F4-4400C17-8GVK 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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G Skill Intl F4-3200C18-16GRS 16GB

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PNY Electronics PNY 2GB

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G Skill Intl F4-3200C16-16GTZ 16GB

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Kingston 9905469-143.A00LF 4GB

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Samsung M378B5773DH0-CH9 2GB

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G Skill Intl F4-3600C19-8GSXW 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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Kingston 99U5624-001.A00G 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.CAGP7.AZ20B 8GB

Apacer Technology 78.CAGP7.AZ20B 8GB

Samsung M393B4G70EMB-CK0 32GB

Samsung M393B4G70EMB-CK0 32GB

Corsair CMK64GX4M8X4200C19 8GB

Corsair CMK64GX4M8X4200C19 8GB