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Lexar Co Limited LD4AU016G-H3200GST 16GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
比较
Lexar Co Limited LD4AU016G-H3200GST 16GB vs Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
总分
Lexar Co Limited LD4AU016G-H3200GST 16GB
总分
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
差异
规格
评论
差异
需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB
报告一个错误
更快的读取速度,GB/s
17.8
13.5
测试中的平均数值
更快的写入速度,GB/s
12.5
10.6
测试中的平均数值
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
报告一个错误
低于PassMark测试中的延时,ns
31
33
左右 -6% 更低的延时
规格
完整的技术规格清单
Lexar Co Limited LD4AU016G-H3200GST 16GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
33
31
读取速度,GB/s
17.8
13.5
写入速度,GB/s
12.5
10.6
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
3285
2330
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M395T5160QZ4-CE66 2GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
Kingston KVR533D2N4 512MB
Ramaxel Technology RMUA5110KE68H9F-2400 4GB
Samsung 1600 CL10 Series 8GB
Corsair CM4X8GF2666C16K4 8GB
takeMS International AG TMS2GB264D082-805G 2GB
V-Color Technology Inc. TL48G32S8KSRGB16 8GB
Corsair CML16GX3M2A1600C10 8GB
Kingston 9905704-007.A00G 4GB
Kingston KHX1600C9D3/8G 8GB
Asgard VMA42UG-MEC1U2AW1 8GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Avant Technology J642GU42J5213NF 16GB
Samsung M393B1K70QB0-CK0 8GB
SK Hynix HMA81GU6AFR8N-UH 8GB
Kingston 9965662-016.A00G 16GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
SK Hynix DDR2 800 2G 2GB
Corsair CMG32GX4M2E3200C16 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M378A5244CB0-CRC 4GB
Peak Electronics 256X64M-67E 2GB
Crucial Technology BL16G32C16U4W.M8FB1 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Samsung M471A2K43BB1-CTD 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-2666C19-8GVK 8GB
报告一个错误
×
Bug description
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