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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Gloway International (HK) STKD4XMP2400-F 4GB
比较
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Gloway International (HK) STKD4XMP2400-F 4GB
总分
Micron Technology 8ATF2G64HZ-3G2E2 16GB
总分
Gloway International (HK) STKD4XMP2400-F 4GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
更快的读取速度,GB/s
15.6
15.2
测试中的平均数值
更快的写入速度,GB/s
11.8
11.4
测试中的平均数值
更高的内存带宽,mbps
25600
17000
左右 1.51% 更高的带宽
需要考虑的原因
Gloway International (HK) STKD4XMP2400-F 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
51
左右 -104% 更低的延时
规格
完整的技术规格清单
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Gloway International (HK) STKD4XMP2400-F 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
51
25
读取速度,GB/s
15.6
15.2
写入速度,GB/s
11.8
11.4
内存带宽,mbps
25600
17000
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2687
2346
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gloway International (HK) STKD4XMP2400-F 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Qimonda 72T128420EFA3SB2 1GB
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Kingmax Semiconductor KLDD48F-B8KU5 1GB
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Kingston 2GB-DDR2 800Mhz 2GB
Kingston 99U5734-014.A00G 16GB
SK Hynix HMT351U6CFR8C-H9 4GB
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
报告一个错误
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Bug description
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