Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Crucial Technology 16G4UD2400.C16BD1 16GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Crucial Technology 16G4UD2400.C16BD1 16GB

Crucial Technology 16G4UD2400.C16BD1 16GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Crucial Technology 16G4UD2400.C16BD1 16GB

需要考虑的原因
Crucial Technology 16G4UD2400.C16BD1 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 42

左右 -75% 更低的延时
更快的读取速度，GB/s

15.5 9.7

测试中的平均数值
更快的写入速度，GB/s

10.4 6.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology 16G4UD2400.C16BD1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 24
读取速度，GB/s

9.7 15.5
写入速度，GB/s

6.0 10.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1396 2654

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMU32GX4M4C3000C16 8GB

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Samsung M378T5663DZ3-CF7 2GB

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SK Hynix HMT425S6AFR6A-PB 2GB

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G Skill Intl F4-2400C17-4GFT 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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Kingston 99U5469-045.A00LF 4GB

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G Skill Intl F4-3400C16-8GSXW 8GB

G Skill Intl F4-3400C16-8GSXW 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Kingston HP32D4S2S1ME-8 8GB

Kingston HP32D4S2S1ME-8 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Panram International Corporation M424051 4GB

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Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Kingston HP37D4U1S8ME-16XR 16GB