RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
总分
Nanya Technology NT4GC64B8HG0NS-CG 4GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
报告一个错误
低于PassMark测试中的延时,ns
18
42
左右 -133% 更低的延时
更快的读取速度,GB/s
20.4
9.7
测试中的平均数值
更快的写入速度,GB/s
18.1
6.0
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
18
读取速度,GB/s
9.7
20.4
写入速度,GB/s
6.0
18.1
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1396
3529
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMSO4GX3M1C1600C11 4GB
Asgard VMA45UH-MEC1U2AW2 16GB
Samsung M393B1G73QH0-CMA 8GB
Chun Well Technology Holding Limited D4U0826190B 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
A-DATA Technology AE4S240038G17-BHYA 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CT8G4DFD8213.C16FHP 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
Samsung M378B5173BH0-CH9 4GB
Essencore Limited IM48GU48N21-FFFHM 8GB
Kingston K531R8-MIN 4GB
Samsung M471A5143DB0-CPB 4GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Samsung SH5724G4UNC26P2-SC 32GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMW32GX4M4C3000C15 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Micron Technology 8G2666CL19 8GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M391A2K43BB1-CTD 16GB
G Skill Intl F3-2133C9-4GAB 4GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
Samsung M391B5673EH1-CH9 2GB
Corsair CM4X16GE2666C16K2 16GB
报告一个错误
×
Bug description
Source link