Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Samsung M378A1G43TB1-CTD 8GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Samsung M378A1G43TB1-CTD 8GB

Samsung M378A1G43TB1-CTD 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

Samsung M378A1G43TB1-CTD 8GB

需要考虑的原因
Samsung M378A1G43TB1-CTD 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 35

左右 -25% 更低的延时
更快的读取速度，GB/s

16.6 13.7

测试中的平均数值
更快的写入速度，GB/s

13.7 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Samsung M378A1G43TB1-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 28
读取速度，GB/s

13.7 16.6
写入速度，GB/s

9.6 13.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2312 3007

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Crucial Technology CT16G4DFS8266.C8FB 16GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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A-DATA Technology DQKD1A08 1GB

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Samsung M471A1G44AB0-CWE 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

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G Skill Intl F4-2933C16-16GFX 16GB

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A-DATA Technology AD73I1C1674EV 4GB

G Skill Intl F4-3000C15-8GTZ 8GB

G Skill Intl F4-3000C15-8GTZ 8GB