PNY Electronics PNY 2GB vs G Skill Intl F4-2400C16-4GRS 4GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

G Skill Intl F4-2400C16-4GRS 4GB

G Skill Intl F4-2400C16-4GRS 4GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

G Skill Intl F4-2400C16-4GRS 4GB

需要考虑的原因
G Skill Intl F4-2400C16-4GRS 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 -17% 更低的延时
更快的读取速度，GB/s

16.6 13.8

测试中的平均数值
更快的写入速度，GB/s

12.6 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

G Skill Intl F4-2400C16-4GRS 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 23
读取速度，GB/s

13.8 16.6
写入速度，GB/s

8.4 12.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2274 2561

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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Samsung M3 78T6553CZ3-CD5 512MB

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Ramaxel Technology RMT3160ME68FAF1600 8GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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AMD R748G2133U2S-UO 8GB

AMD R748G2133U2S-UO 8GB