Samsung DDR3 8GB 1600MHz 8GB vs Golden Empire CL16-18-18 D4-3000 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Golden Empire CL16-18-18 D4-3000 16GB

Golden Empire CL16-18-18 D4-3000 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Golden Empire CL16-18-18 D4-3000 16GB

需要考虑的原因
Golden Empire CL16-18-18 D4-3000 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 43

左右 -43% 更低的延时
更快的读取速度，GB/s

17 14.9

测试中的平均数值
更快的写入速度，GB/s

12.9 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Golden Empire CL16-18-18 D4-3000 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 30
读取速度，GB/s

14.9 17.0
写入速度，GB/s

9.6 12.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2506 3255

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Golden Empire CL16-18-18 D4-3000 16GB

Golden Empire CL16-18-18 D4-3000 16GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Kingston KHX2400C14/16G 16GB

Kingston KHX2400C14/16G 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Gloway International (HK) STK4U2400D15082C 8GB

Gloway International (HK) STK4U2400D15082C 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB

Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

G Skill Intl F4-3200C16-4GTZB 4GB

G Skill Intl F4-3200C16-4GTZB 4GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Kingston 8ATF1G64AZ-2G1B1 8GB

Kingston 8ATF1G64AZ-2G1B1 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

G Skill Intl F4-2400C14-16GVK 16GB

G Skill Intl F4-2400C14-16GVK 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Terabyte Co Ltd RCX2-16G3000R 8GB

Terabyte Co Ltd RCX2-16G3000R 8GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

G Skill Intl F4-3200C16-8GFX 8GB

G Skill Intl F4-3200C16-8GFX 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Kllisre 0000 8GB

Kllisre 0000 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Kllisre 8ATF1G64AZ-2G6H1 8GB

Kllisre 8ATF1G64AZ-2G6H1 8GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

G Skill Intl F4-2933C14-8GFX 8GB

G Skill Intl F4-2933C14-8GFX 8GB