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Samsung M3 78T5663RZ3-CF7 2GB
Elpida EBE21UE8AEFA-8G-E 2GB

Samsung M3 78T5663RZ3-CF7 2GB vs Elpida EBE21UE8AEFA-8G-E 2GB

总分
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分
star star star star star
Elpida EBE21UE8AEFA-8G-E 2GB

Elpida EBE21UE8AEFA-8G-E 2GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,784.6 left arrow 1,903.7
    测试中的平均数值
Elpida EBE21UE8AEFA-8G-E 2GB 需要考虑的原因
Elpida EBE21UE8AEFA-8G-E 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    62 left arrow 65
    左右 -5% 更低的延时

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
Elpida EBE21UE8AEFA-8G-E 2GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    65 left arrow 62
  • 读取速度，GB/s
    4,806.8 left arrow 4,662.9
  • 写入速度，GB/s
    2,784.6 left arrow 1,903.7
  • 内存带宽，mbps
    6400 left arrow 6400
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    932 left arrow 839

Samsung M3 78T5663RZ3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

Elpida EBE21UE8AEFA-8G-E 2GB RAM的比较

Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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