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Samsung M3 78T2953EZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
比较
Samsung M3 78T2953EZ3-CF7 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
总分
Samsung M3 78T2953EZ3-CF7 1GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB
报告一个错误
更快的读取速度,GB/s
4
17.5
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
58
左右 -152% 更低的延时
更快的写入速度,GB/s
14.6
1,950.7
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T2953EZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
58
23
读取速度,GB/s
4,241.0
17.5
写入速度,GB/s
1,950.7
14.6
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
651
3260
Samsung M3 78T2953EZ3-CF7 1GB RAM的比较
Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston KP4T2F-PSB 4GB
Corsair CMD32GX4M4B3733C17 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Corsair CMH32GX4M2D3600C18 16GB
SK Hynix HMT425S6CFR6A-PB 2GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
Samsung M3 78T2863QZS-CF7 1GB
Maxsun MSD44G24Q3 4GB
Samsung M471B5173QH0-YK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Crucial Technology CT51264BA1339.C16F 4GB
SK Hynix HMA851S6DJR6N-XN 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
V-Color Technology Inc. TN416G26D819-SB 16GB
Samsung 1600 CL10 Series 8GB
Kingston KF3600C18D4/32GX 32GB
A-DATA Technology VDQVE1B16 2GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
报告一个错误
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