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Samsung M3 78T5663RZ3-CE6 2GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
比较
Samsung M3 78T5663RZ3-CE6 2GB vs UMAX Technology D4-2400-4GB-512X8-L 4GB
总分
Samsung M3 78T5663RZ3-CE6 2GB
总分
UMAX Technology D4-2400-4GB-512X8-L 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
低于PassMark测试中的延时,ns
60
64
左右 6% 更低的延时
更快的读取速度,GB/s
4
17.1
测试中的平均数值
需要考虑的原因
UMAX Technology D4-2400-4GB-512X8-L 4GB
报告一个错误
更快的写入速度,GB/s
8.3
2,168.2
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
60
64
读取速度,GB/s
4,595.2
17.1
写入速度,GB/s
2,168.2
8.3
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
941
1948
Samsung M3 78T5663RZ3-CE6 2GB RAM的比较
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
UMAX Technology D4-2400-4GB-512X8-L 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Team Group Inc. Team-Elite-1333 4GB
G Skill Intl F4-3333C16-16GVR 16GB
SK Hynix HYMP125S64CP8-S6 2GB
Kingston KHX2666C16S4/32G 32GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
Kingston 99U5474-037.A00LF 4GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
A-DATA Technology VDQVE1B16 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
SK Hynix HYMP125S64CP8-S6 2GB
Micron Technology AFLD48VH1P 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston HP37D4U1S8ME-8XR 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMW64GX4M4C3466C16 16GB
Kingston KF552C40-16 16GB
G Skill Intl F4-4000C18-8GTRS 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M471A2K43CB1-CTCT 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
SK Hynix HMA851U6DJR6N-XN 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Panram International Corporation PUD43000C168G2NJR 8GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3200C14-8GTZKO 8GB
报告一个错误
×
Bug description
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