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Samsung M3 78T6553EZS-CF7 512MB
Corsair CM5S16GM4800A40N2 16GB

Samsung M3 78T6553EZS-CF7 512MB vs Corsair CM5S16GM4800A40N2 16GB

总分
star star star star star
Samsung M3 78T6553EZS-CF7 512MB

Samsung M3 78T6553EZS-CF7 512MB

总分
star star star star star
Corsair CM5S16GM4800A40N2 16GB

Corsair CM5S16GM4800A40N2 16GB

差异 规格 评论

差异

Samsung M3 78T6553EZS-CF7 512MB 需要考虑的原因
Samsung M3 78T6553EZS-CF7 512MB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,021.5 left arrow 12.4
    测试中的平均数值
Corsair CM5S16GM4800A40N2 16GB 需要考虑的原因
Corsair CM5S16GM4800A40N2 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 47
    左右 -96% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T6553EZS-CF7 512MB
Corsair CM5S16GM4800A40N2 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR5
  • PassMark中的延时，ns
    47 left arrow 24
  • 读取速度，GB/s
    3,575.4 left arrow 13.9
  • 写入速度，GB/s
    2,021.5 left arrow 12.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow no data / 2400 MHz
  • 排名PassMark (越多越好)
    563 left arrow 3480

Samsung M3 78T6553EZS-CF7 512MB RAM的比较

Patriot Memory (PDP Systems) 3200 C16 Series 8GB

Corsair CM5S16GM4800A40N2 16GB RAM的比较

Shenzen Recadata Storage Technology 8GB
Corsair CMW16GX4M2C3200C14 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston 9905625-004.A03LF 4GB
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内存RAM
Ramaxel Technology RMN1740HC48D8F667A 2GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
Kingston 9905624-051.A00G 8GB
Kingston 9905624-051.A00G 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
A-DATA Technology AO1P26KC8T1-BXPS 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Terabyte Co Ltd RCX2-16G3600A 8GB
Terabyte Co Ltd RCX2-16G3600A 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Chun Well Technology Holding Limited D4U0836144B 8GB
Chun Well Technology Holding Limited D4U0836144B 8GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Samsung M378A1G44BB0-CWE 8GB
Samsung M378A1G44BB0-CWE 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Crucial Technology CT4G4DFS8213.M8FA 4GB
Crucial Technology CT4G4DFS8213.M8FA 4GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Apacer Technology 78.CAGR4.40C0B 8GB
Apacer Technology 78.CAGR4.40C0B 8GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Chun Well Technology Holding Limited MD4U1632160DCW 16G
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMW32GX4M2D3600C18 16GB
Corsair CMW32GX4M2D3600C18 16GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Crucial Technology BLS4G4D240FSB.M8FBD 4GB
Crucial Technology BLS4G4D240FSB.M8FBD 4GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
G Skill Intl F4-3600C19-16GTRG 16GB
G Skill Intl F4-3600C19-16GTRG 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingmax Semiconductor GLLG42F-DA---------- 8GB
Kingmax Semiconductor GLLG42F-DA---------- 8GB
内存RAM