Samsung M323R2GA3BB0-CQKOD 16GB vs Micron Technology 4ATF1G64AZ-3G2B1 8GB

总分

Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

总分

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

差异规格评论

差异

Samsung M323R2GA3BB0-CQKOD 16GB

需要考虑的原因
Samsung M323R2GA3BB0-CQKOD 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 28

左右 11% 更低的延时
更快的写入速度，GB/s

12.1 10.3

测试中的平均数值

Micron Technology 4ATF1G64AZ-3G2B1 8GB

需要考虑的原因
Micron Technology 4ATF1G64AZ-3G2B1 8GB

报告一个错误

更快的读取速度，GB/s

15.4 13.4

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M323R2GA3BB0-CQKOD 16GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

25 28
读取速度，GB/s

13.4 15.4
写入速度，GB/s

12.1 10.3
内存带宽，mbps

19200 25600

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

no data / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3419 2892

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT51264BD160B.C16F 4GB

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Kingston 99U5663-006.A00G 16GB

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Apacer Technology 78.01GA0.9K5 1GB

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INTENSO 5641160 8GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Kingston KHX16 4GB

Kingston KHX16 4GB

Corsair CMK16GX4M1E3200C16 16GB

Corsair CMK16GX4M1E3200C16 16GB