Samsung M378B5673FH0-CH9 2GB vs Micron Technology 4ATF51264AZ-3G2E1 4GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

Micron Technology 4ATF51264AZ-3G2E1 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

35 48

左右 27% 更低的延时
更快的写入速度，GB/s

9.5 8.3

测试中的平均数值

Micron Technology 4ATF51264AZ-3G2E1 4GB

需要考虑的原因
Micron Technology 4ATF51264AZ-3G2E1 4GB

报告一个错误

更快的读取速度，GB/s

17.5 14.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 48
读取速度，GB/s

14.4 17.5
写入速度，GB/s

9.5 8.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2321 2196

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 4ATF51264AZ-2G3E1 4GB

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Golden Empire CL14-16-16 D4-2400 16GB

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AMD AE34G1601U1 4GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB