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TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BL4G24C16U4B.8FE 4GB

TwinMOS 8DPT5MK8-TATP 2GB vs Crucial Technology BL4G24C16U4B.8FE 4GB

总分
star star star star star
TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分
star star star star star
Crucial Technology BL4G24C16U4B.8FE 4GB

Crucial Technology BL4G24C16U4B.8FE 4GB

差异 规格 评论

差异

TwinMOS 8DPT5MK8-TATP 2GB 需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 14.8
    测试中的平均数值
Crucial Technology BL4G24C16U4B.8FE 4GB 需要考虑的原因
Crucial Technology BL4G24C16U4B.8FE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 53
    左右 -51% 更低的延时
  • 更快的写入速度，GB/s
    11.1 left arrow 1,590.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BL4G24C16U4B.8FE 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    53 left arrow 35
  • 读取速度，GB/s
    3,726.4 left arrow 14.8
  • 写入速度，GB/s
    1,590.1 left arrow 11.1
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    522 left arrow 2566

TwinMOS 8DPT5MK8-TATP 2GB RAM的比较

Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB

Crucial Technology BL4G24C16U4B.8FE 4GB RAM的比较

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 9965525-018.A00LF 4GB
Corsair CMK32GX4M2A2400C16 16GB
Corsair CMK32GX4M2A2400C16 16GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Corsair CMW32GX4M4K3733C17 8GB
Corsair CMW32GX4M4K3733C17 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BL4G24C16U4B.8FE 4GB
Crucial Technology BL4G24C16U4B.8FE 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Kingston 9905712-009.A00G 16GB
Kingston 9905712-009.A00G 16GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
Crucial Technology CT8G4SFS8213.C8FAD1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology CT8G4DFD8213.M16FA 8GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Corsair CMK8GX4M1Z3600C18 8GB
Corsair CMK8GX4M1Z3600C18 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Jinyu 16GB
Jinyu 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMN32GX4M2Z3600C16 16GB
Corsair CMN32GX4M2Z3600C16 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingston KHX3600C18D4/32GX 32GB
Kingston KHX3600C18D4/32GX 32GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Samsung M471A1K43BB0-CPB 8GB
Samsung M471A1K43BB0-CPB 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Corsair CMR32GX4M2C3000C16 16GB
Corsair CMR32GX4M2C3000C16 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB
内存RAM