Samsung M378T5663QZ3-CF7 2GB vs Kingston KVR800D2E5-2G 2GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Kingston KVR800D2E5-2G 2GB

Kingston KVR800D2E5-2G 2GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

低于PassMark测试中的延时，ns

56 63

左右 11% 更低的延时
更快的读取速度，GB/s

4 4

测试中的平均数值

Kingston KVR800D2E5-2G 2GB

需要考虑的原因
Kingston KVR800D2E5-2G 2GB

报告一个错误

更快的写入速度，GB/s

3,139.2 1,813.5

测试中的平均数值

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Kingston KVR800D2E5-2G 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

56 63
读取速度，GB/s

4,387.7 4,027.7
写入速度，GB/s

1,813.5 3,139.2
内存带宽，mbps

6400 6400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

693 739

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Crucial Technology CT16G4SFD8266.C16FJ 16GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Kingston KHX3200C16D4/4GX 4GB

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AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Micron Technology 9ASF1G72PZ-2G6D1 8GB

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PNY Electronics PNY 2GB

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SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

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