Samsung M391B5273CH0-CH9 4GB vs Corsair CMU16GX4M2A2666C16 8GB

总分

Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

总分

Corsair CMU16GX4M2A2666C16 8GB

Corsair CMU16GX4M2A2666C16 8GB

差异规格评论

差异

Samsung M391B5273CH0-CH9 4GB

需要考虑的原因
Samsung M391B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时

Corsair CMU16GX4M2A2666C16 8GB

需要考虑的原因
Corsair CMU16GX4M2A2666C16 8GB

报告一个错误

更快的读取速度，GB/s

17 13.4

测试中的平均数值
更快的写入速度，GB/s

12.7 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5273CH0-CH9 4GB

Corsair CMU16GX4M2A2666C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

13.4 17.0
写入速度，GB/s

8.4 12.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2275 3142

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston CAC24D4S7D8MB-16 16GB

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Kingston 99U5403-492.A00LF 8GB

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Kingston 9905598-028.A00G 8GB

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Kingston 99U5429-007.A00LF 2GB

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Apacer Technology 78.C1GS7.AUC0B 8GB

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Swissbit MEU25664D6BC2EP-30 2GB

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Golden Empire CL15-17-17 D4-3000 8GB

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Kingmax Semiconductor GLLH22F-18---------- 16GB

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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Shenzen Recadata Storage Technology 8GB

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Corsair CM4B8G1J2800K14K 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Samsung M471A1K43CB1-CRCR 8GB

Samsung M471A1K43CB1-CRCR 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Crucial Technology CT4G4DFS824A.C8FDD2 4GB

Crucial Technology CT4G4DFS824A.C8FDD2 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

G Skill Intl F4-3333C16-16GVK 16GB

G Skill Intl F4-3333C16-16GVK 16GB