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Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB

Samsung M393B1G70BH0-YK0 8GB vs Crucial Technology BL8G30C15U4R.M8FE1 8GB

总分
star star star star star
Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分
star star star star star
Crucial Technology BL8G30C15U4R.M8FE1 8GB

Crucial Technology BL8G30C15U4R.M8FE1 8GB

差异 规格 评论

差异

Samsung M393B1G70BH0-YK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB
报告一个错误
Crucial Technology BL8G30C15U4R.M8FE1 8GB 需要考虑的原因
Crucial Technology BL8G30C15U4R.M8FE1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 49
    左右 -53% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 32
  • 读取速度，GB/s
    10.2 left arrow 17.4
  • 写入速度，GB/s
    8.1 left arrow 14.5
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2465 left arrow 3385

Samsung M393B1G70BH0-YK0 8GB RAM的比较

Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB

Crucial Technology BL8G30C15U4R.M8FE1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
SK Hynix HMA81GU6MFR8N-UH 8GB
SK Hynix HMA81GU6MFR8N-UH 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT16G4DFD832A.M16FJ 16GB
Crucial Technology CT16G4DFD832A.M16FJ 16GB
内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
EVGA 8GX-D4-2800-MR 8GB
EVGA 8GX-D4-2800-MR 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-2400C15-8GVR 8GB
G Skill Intl F4-2400C15-8GVR 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Wilk Elektronik S.A. GR3200D464L22S/16G 16GB
Wilk Elektronik S.A. GR3200D464L22S/16G 16GB
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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Chun Well Technology Holding Limited MD4U1636181DCW 16G
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Samsung V-GeN D4S8GL32A8TL 8GB
内存RAM
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
G Skill Intl F4-3600C14-16GVKA 16GB
G Skill Intl F4-3600C14-16GVKA 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Mushkin MR[A/B]4U300JJJM16G 16GB
Mushkin MR[A/B]4U300JJJM16G 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3300C16-16GTZKW 16GB
G Skill Intl F4-3300C16-16GTZKW 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Apacer Technology 78.CAGP7.4020B 8GB
Apacer Technology 78.CAGP7.4020B 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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Ramaxel Technology RMUA5200ME78HAF-3200 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
内存RAM