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Samsung M393B2G70BH0-CK0 16GB
A-DATA Technology DDR4 2666 2OZ 4GB
比较
Samsung M393B2G70BH0-CK0 16GB vs A-DATA Technology DDR4 2666 2OZ 4GB
总分
Samsung M393B2G70BH0-CK0 16GB
总分
A-DATA Technology DDR4 2666 2OZ 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
需要考虑的原因
A-DATA Technology DDR4 2666 2OZ 4GB
报告一个错误
低于PassMark测试中的延时,ns
30
54
左右 -80% 更低的延时
更快的读取速度,GB/s
16.7
9.2
测试中的平均数值
更快的写入速度,GB/s
12.3
8.1
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
A-DATA Technology DDR4 2666 2OZ 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
54
30
读取速度,GB/s
9.2
16.7
写入速度,GB/s
8.1
12.3
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2105
3106
Samsung M393B2G70BH0-CK0 16GB RAM的比较
Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB
A-DATA Technology DDR4 2666 2OZ 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B2G70BH0-CK0 16GB
A-DATA Technology DDR4 2666 2OZ 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Kingston 99U5428-052.A00LF 8GB
Team Group Inc. Team-Elite-2133 4GB
Crucial Technology CT102464BF160B-16F 8GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology CT4G4DFS824A.C8FBD1 4GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
Crucial Technology CT51264BA1339.C16F 4GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
Samsung M3 78T5663RZ3-CE6 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
Samsung M386B4G70DM0-CMA4 32GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology BLM8G40C18U4B.M8FE1 8GB
Kingston 99U5584-005.A00LF 4GB
Ramaxel Technology RMSA3260MB78HAF2400 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Super Talent F3200UA8G 8GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M378A1G43DB0-CPB 8GB
报告一个错误
×
Bug description
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