Samsung M395T2863QZ4-CF76 1GB vs Asgard VML41UG-MIC1U22T1 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Asgard VML41UG-MIC1U22T1 8GB

Asgard VML41UG-MIC1U22T1 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 16.4

测试中的平均数值

Asgard VML41UG-MIC1U22T1 8GB

需要考虑的原因
Asgard VML41UG-MIC1U22T1 8GB

报告一个错误

低于PassMark测试中的延时，ns

65 104

左右 -60% 更低的延时
更快的写入速度，GB/s

8.4 2,404.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Asgard VML41UG-MIC1U22T1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 65
读取速度，GB/s

3,192.0 16.4
写入速度，GB/s

2,404.5 8.4
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 2041

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905471-002.A00LF 2GB

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V-GEN D4S8GL30A8TS5 8GB

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Crucial Technology CT16G4DFD8266.C16FP 16GB

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Micron Technology 4ATF1G64HZ-3G2E1 8GB

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G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F4-3200C16-4GRK 4GB

G Skill Intl F4-3200C16-4GRK 4GB