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Samsung M471B5173QH0-YK0 4GB
Corsair CM4X8GF2666C16K8 8GB
比较
Samsung M471B5173QH0-YK0 4GB vs Corsair CM4X8GF2666C16K8 8GB
总分
Samsung M471B5173QH0-YK0 4GB
总分
Corsair CM4X8GF2666C16K8 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
需要考虑的原因
Corsair CM4X8GF2666C16K8 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
45
左右 -67% 更低的延时
更快的读取速度,GB/s
17
12.3
测试中的平均数值
更快的写入速度,GB/s
13.7
8.0
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Corsair CM4X8GF2666C16K8 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
27
读取速度,GB/s
12.3
17.0
写入速度,GB/s
8.0
13.7
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1992
3323
Samsung M471B5173QH0-YK0 4GB RAM的比较
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Corsair CM4X8GF2666C16K8 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
Corsair CM3X8GA2400C11Y2R 8GB
A-DATA Technology DDR4 3600 2OZ 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Avant Technology J641GU42J5213N0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-4000C18-8GTZRB 8GB
Corsair CMSO4GX3M1C1600C11 4GB
Ramaxel Technology RMUA5110KE68H9F-2400 4GB
Kingston 9905469-143.A00LF 4GB
Essencore Limited IM48GU88N24-FFFHAB 8GB
Team Group Inc. Team-Value-800 2GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMK16GX4M4C3000C16 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Samsung M393B2G70BH0-CK0 16GB
Transcend Information TS1GLH64V4B 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMK32GX4M4B3733C17 8GB
报告一个错误
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Bug description
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