Samsung M471B5273DH0-CK0 4GB vs Corsair CMK32GX4M1D3000C16 32GB

总分

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

总分

Corsair CMK32GX4M1D3000C16 32GB

Corsair CMK32GX4M1D3000C16 32GB

差异规格评论

差异

Samsung M471B5273DH0-CK0 4GB

需要考虑的原因
Samsung M471B5273DH0-CK0 4GB

报告一个错误

Corsair CMK32GX4M1D3000C16 32GB

需要考虑的原因
Corsair CMK32GX4M1D3000C16 32GB

报告一个错误

低于PassMark测试中的延时，ns

37 41

左右 -11% 更低的延时
更快的读取速度，GB/s

14.1 13.3

测试中的平均数值
更快的写入速度，GB/s

11.1 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CK0 4GB

Corsair CMK32GX4M1D3000C16 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 37
读取速度，GB/s

13.3 14.1
写入速度，GB/s

9.0 11.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2016 2946

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) 3600 C20 Series 8GB

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Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Kingston MSISID4S9S8ME-8 8GB

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Crucial Technology CT4G4DFS824A.M8FE 4GB

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Avant Technology W642GU42J5213N2 16GB

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Corsair CMK64GX4M4A2400C16 16GB

Corsair CMZ16GX3M2A2400C10 8GB

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G Skill Intl F4-3600C16-8GTZN 8GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-2666C15-4GVK 4GB

G Skill Intl F4-2666C15-4GVK 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

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Patriot Memory (PDP Systems) PSD48G24002 8GB

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Kingston 99U5474-013.A00LF 2GB

Kingston XW21KG-HYD-NX 8GB

Kingston XW21KG-HYD-NX 8GB