Samsung M471B5673FH0-CF8 2GB vs Samsung M378A1K43BB1-CTD 16GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

Samsung M378A1K43BB1-CTD 16GB

Samsung M378A1K43BB1-CTD 16GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 31

左右 3% 更低的延时

Samsung M378A1K43BB1-CTD 16GB

需要考虑的原因
Samsung M378A1K43BB1-CTD 16GB

报告一个错误

更快的读取速度，GB/s

17.3 10.6

测试中的平均数值
更快的写入速度，GB/s

13.4 6.8

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

Samsung M378A1K43BB1-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 31
读取速度，GB/s

10.6 17.3
写入速度，GB/s

6.8 13.4
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1479 2762

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX1600C9D3/4G 4GB

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Team Group Inc. TEAMGROUP-UD4-3600 8GB

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Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

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G Skill Intl F4-3600C16-8GTZSW 8GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Crucial Technology CT4G4DFS8266.M8FE 4GB

Crucial Technology CT4G4DFS8266.M8FE 4GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

G Skill Intl F4-4266C19-8GTRS 8GB

G Skill Intl F4-4266C19-8GTRS 8GB