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SK Hynix DDR2 800 2G 2GB
Samsung V-GeN D4S4GL32A8TL 4GB

SK Hynix DDR2 800 2G 2GB vs Samsung V-GeN D4S4GL32A8TL 4GB

总分
star star star star star
SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分
star star star star star
Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

差异 规格 评论

差异

SK Hynix DDR2 800 2G 2GB 需要考虑的原因
SK Hynix DDR2 800 2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18.5
    测试中的平均数值
Samsung V-GeN D4S4GL32A8TL 4GB 需要考虑的原因
Samsung V-GeN D4S4GL32A8TL 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    58 left arrow 77
    左右 -33% 更低的延时
  • 更快的写入速度，GB/s
    9.5 left arrow 1,884.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
SK Hynix DDR2 800 2G 2GB
Samsung V-GeN D4S4GL32A8TL 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 58
  • 读取速度，GB/s
    2,936.9 left arrow 18.5
  • 写入速度，GB/s
    1,884.0 left arrow 9.5
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    564 left arrow 1998

SK Hynix DDR2 800 2G 2GB RAM的比较

Samsung M378T5663QZ3-CF7 2GB
Kingston KHX3466C19D4/8G 8GB

Samsung V-GeN D4S4GL32A8TL 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Elpida EBJ40EG8BFWB-JS-F 4GB
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Apacer Technology 78.C1GM3.C7Z0C 8GB
内存RAM
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KNG/4G 4GB
Corsair CMD64GX4M8A2666C15 8GB
Corsair CMD64GX4M8A2666C15 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
内存RAM
Apacer Technology 78.A1GA0.9L4 2GB
Apacer Technology 78.A1GA0.9L4 2GB
Apacer Technology 78.D1GMM.AU10B 16GB
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A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
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Teikon TMA851U6AFR6N-UHHC 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
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内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
内存RAM
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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内存RAM
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Samsung M3 78T5663RZ3-CF7 2GB
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内存RAM
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A-DATA Technology DQVE1908 512MB
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G Skill Intl F4-3200C22-32GRS 32GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
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Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
内存RAM
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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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Corsair CMK16GX4M1A2666C16 16GB
内存RAM
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Hewlett-Packard 48U45AA# 16GB
内存RAM
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SK Hynix HMT325S6CFR8C-PB 2GB
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Kingston CBD26D4S9D8ME-16 16GB
内存RAM