SK Hynix DDR2 800 2G 2GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 15.1

测试中的平均数值

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

73 77

左右 -5% 更低的延时
更快的写入速度，GB/s

7.9 1,884.0

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 73
读取速度，GB/s

2,936.9 15.1
写入速度，GB/s

1,884.0 7.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

564 1724

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Golden Empire CL18-20-20 D4-3200 8GB

Corsair CM4X16GC3000C16K4D 16GB

Corsair CM4X16GC3000C16K4D 16GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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G Skill Intl F4-4000C18-8GTZ 8GB

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Corsair CMD8GX3M2A2933C12 4GB

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